In review
Theory of tunneling conductance of graphene NIS junctions [Version 0]
20 Apr 2007 | By Bhattacharjee, Subhro , Maiti, Moitri , Sengupta, K. .
We calculate the tunneling conductance of a graphene normal metal-insulator-superconductor (NIS) junction with a barrier of thickness $d$ and with an arbitrary voltage $V_0$ applied across the barrier region. We demonstrate that the tunneling conductance of such a NIS junction is an oscillatory function of both $d$ and $V_0$. We also show that the periodicity and amplitude of such oscillations deviate from their universal values in the thin barrier limit as obtained in earlier work [Phys. Rev. Lett. {\bf 97}, 217001 (2006)] and become a function of the applied voltage $V_0$. Our results reproduces the earlier results on tunneling conductance of such junctions in the thin [Phys. Rev. Lett. {\bf 97}, 217001 (2006)] and zero [Phys. Rev. Lett. {\bf 97}, 067007 (2006)] barrier limits as special limiting cases. We discuss experimental relevance of our results. Comment: Revised version






  • DOI: 10.1103/PhysRevB.76.184514
  • Access type: Open Access
  • Review type: Open Review
  • Publication type: Article
  • Publication date: 20 April 2007